By D. Shindo, T. Oikawa, Daisuke Shindo, Tetsuo Oikawa

Analytical electron microscopy is likely one of the strongest instruments at the present time for characterization of the complicated fabrics that help the nanotechnology of the twenty-first century. during this publication the authors truly clarify either the elemental rules and the most recent advancements within the box. as well as a primary description of the inelastic scattering approach, an evidence of the constituent is equipped. common quantitative analytical suggestions using electron energy-loss spectroscopy and energy-dispersive X-ray spectroscopy also are defined, in addition to elemental mapping suggestions. integrated are sections on convergent beam electron diffraction and electron holography using the sphere emission gun. With beneficiant use of illustrations and experimental facts, this booklet is a priceless source for somebody serious about fabrics characterization, electron microscopy, fabrics technological know-how, crystallography, and instrumentation.

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Extra resources for Analytical Electron Microscopy for Materials Science

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4 I- • ! 1 Fig. 30. Fading characteristic of the imaging plate (FD L-UR -V). 0 I o a high S/N is appropriate. It is known that the DQE of an imaging plate generally decreases with an increase in accelerating voltage. This is because the penetration power of the incident electrons in the phosphor layer increases with the increase in accelerating voltage, and so some of the electrons pass through the phosphor layer. The tendency for 100 I 200 300 400 Time (h) DQE to decrease on an imaging plate in regions of low and high electron intensity is basically the same as for a slow-scan CCD camera [7-9].

1 In eleetron microseopes the original value is sometimes indicated by the lens excitation volta ge instead of the lens exeitation current when they are related by the resistance in the circuit. 36 2. Constitution and Basic Operation of Analytical EM Adjust the electron gun. Align the condenser lenses. Adjust the astigmatism in the condenser lens. Align the volta ge center of the objective lens. Adjust the astigmatism in the objective lens. Adjust the astigmatism in the intermediate lens. 7. Align the projector lens.

The (S/N)2 characteristics of the imaging plate (FDL-UR-V) for high-gain mode and low-gain mode (sqltares, lOOkV;filled eil'eles, 200kV) t: high-gain mode 10 ' ~~~ ~~ o i ~ low-g"o mode o 10- 1 10-1 10 ' 10 5 103 Number 01 incident electrons (elpixel) in electron intensity. In a low electron intensity region the noise is relatively high, so it is difficult to carry out the image analysis with high precision. In regions of electron intensity higher than 102 electrons/pixel, the (S/N)2 tends to be saturated.

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